advanced power n-channel enhancement mode electronics corp. power mosfet low gate charge bv dss 75v simple drive requirement r ds(on) 11m fast switching characteristic i d 80a rohs compliant description absolute maximum ratings symbol units v ds drain-source voltage v v gs gate-source voltage v i d @t c =25 continuous drain current, v gs @ 10v a i d @t c =100 continuous drain current, v gs @ 10v a i dm pulsed drain current 1 a p d @t c =25 total power dissipation w w/ e as mj t stg t j operating junction temperature range thermal data symbol value units rthj-c thermal resistance junction-case max. 0.8 /w rthj-a thermal resistance junction-ambient max. 62 /w data & specifications subject to change without notice 200519062-1/4 AP75N07GP/s pb free plating product 1.25 450 parameter parameter rating 75 20 80 56 300 -55 to 150 -55 to 150 156 linear derating factor single pulse avalanche energy 3 storage temperature range g d s g d s to-220(p) the advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. g d s to-263(s) the to-263 package is universally preferred for all commercial- industrial surface mount applications and suited for low voltage applications such as dc/dc converters. the through-hole version (AP75N07GP) are available for low-profile applications.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =1ma 75 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.08 - v/ r ds(on) static drain-source on-resistance v gs =10v, i d =40a - - 11 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =40a - 40 - s i dss drain-source leakage current (t j =25 o c) v ds =75v, v gs =0v - - 10 ua drain-source leakage current (t j =150 o c) v ds =60v , v gs =0v - - 100 ua i gss gate-source leakage v gs =20v - - 100 na q g total gate charge 2 i d =40a - 83 130 nc q gs gate-source charge v ds =60v - 10 - nc q gd gate-drain ("miller") charge v gs =4.5v - 51 - nc t d(on) turn-on delay time 2 v dd =40v - 15 - ns t r rise time i d =30a - 73 - ns t d(off) turn-off delay time r g =10 , v gs =10v - 340 - ns t f fall time r d =1.33 - 200 - ns c iss input capacitance v gs =0v - 4270 6830 pf c oss output capacitance v ds =25v - 690 - pf c rss reverse transfer capacitance f=1.0mhz - 320 - pf r g gate resistance f=1.0mhz - 1.8 2.7 ? source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 t j =25 , i s =40a, v gs =0v - - 1.5 v t rr reverse recovery time i s =40a, v gs =0v - 90 - ns q rr reverse recovery charge di/dt=100a/s - 235 - nc notes: 1.pulse width limited by safe operating area. 2.pulse width < 300us , duty cycle < 2%. 3.starting t j =25 o c , v dd =50v , l=1mh , r g =25 , i as =30a. 2/4 AP75N07GP/s
fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. on-resistance vs. reverse diode drain current 3/4 AP75N07GP/s 0 40 80 120 160 200 240 280 036912 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c v g =3.0v 10v 7.0 v 5.0v 4.5v 0 40 80 120 160 200 240 036912 v ds , drain-to-source voltage (v) i d , drain current (a) t c = 150 o c v g =3.0v 10v 7.0 v 5.0v 4.5v 8 12 16 20 246810 v gs gate-to-source voltage (v) r ds(on) (m ) i d =20a t c =25 o c 0.4 0.8 1.2 1.6 2.0 25 50 75 100 125 150 t j , junction temperature ( o c) normalized r ds(on) i d =40a v g =10v 0 5 10 15 20 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 9.0 10.0 11.0 12.0 13.0 0 20406080 i d , drain current (a) r ds(on) (m ? ) v gs =4.5v v gs =10v
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 4/4 AP75N07GP/s q v g 4.5v q gs q gd q g charge 100 1000 10000 1 5 9 1317212529 v ds ,drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 1 10 100 1000 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t c =25 o c s in g le puls e 100us 1ms 10ms 100ms 1s dc 0 40 80 120 0246 v gs , gate-to-source voltage (v) i d , drain current (a) t j =25 o c v ds =5v 0 2 4 6 8 10 12 14 0 40 80 120 160 200 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =40v v ds =48v v ds =60v i d =40a 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 duty=0.5 single pulse 0. 2 t j =150 o c
package outline : to-220 ? millimeters min nom max a 4.25 4.48 4.70 b 0.65 0.80 0.90 b1 1.15 1.38 1.60 c 0.40 0.50 0.60 c1 1.00 1.20 1.40 e 9.70 10.00 10.40 e1 --- --- 11.50 e ---- 2.54 ---- l 12.70 13.60 14.50 l1 2.60 2.80 3.00 l2 1.00 1.40 1.80 l3 2.6 3.10 3.6 l4 14.70 15.50 16 l5 6.30 6.50 6.70 3.50 3.60 3.70 d 8.40 8.90 9.40 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : to-220 ?? qwqad-7701 e 12 a 43 symbols M???? a ? D ( oU ) advanced power electronics corp. e b b1 e d l3 l4 l1 l2 a c1 c l package code part number date code (ywwsss) y last digit of the year ww week sss sequence 75n07gp ywwsss logo l5 option o meet rohs requirement e1
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